Faculty of Electronics and Telecommunications, Poznan University of Technology, Poznan, Poland
Title: Electrical Resistance of Metallic and Semiconductor Nanowires
Biography:
Waldemar Nawrocki is Professor of electronics at Poznan University of Technology, Poland, where he earned a Ph.D. in technical sciences in 1981. Dr. Nawrocki also holds a D.Sc. in physics from Jena University, Germany, in 1990. His research fields are: Applications of quantum effects in metrology, Quantization of conductance in mesoscopic systems, Noise thermometry, Cryoelectronics, Measurement systems. Dr. Nawrocki has published 14 books, e.g. Measurement Systems and Sensors (Artech House, 1st edition – 2005, and 2nd edition - 2016) and Introduction to Quantum Metrology (Springer, 2015). Over the period 2006 to 2016 he organized and chaired five international conferences on quantum metrology.
In the paper electrical resistance (conductance) and thermal conductance of metallic and semiconductor nanowires are discussed. We have analyzed and measured nanowires created of gold, copper, tin, silicon and germanium because of using them for manufacturing of integrated electronic devices. Electrical conductance GE and thermal conductance GT of a nanostructure describe the effect of electron transport in nanowires. Electrical conductance quantization in nanowires has been observed in units of G0 = 2e2/h = (12.9 kï—)-1 up to five quanta of conductance according to the theory proposed by Landauer [1]. In the paper we present our measurements of electrical conductance quantization in Au nanowires at room temperature [2]. The quantization of thermal conductance is considered in a similar way like the electrical conductance. In one-dimension systems are formed conductive channels. Each channel contributes to a total thermal conductance with the quantum of thermal conductance GT0. Quantized thermal conductance and its quantum (unit) GT0 was confirmed by Schwab [3]. The quantum of thermal conductance GT0 [W/K] = (p2kB2/3h)T = 9.5×10-13T depends on the tempera-ture. At T = 300 K value of GT0 = 2.8×10-10 [W/K]. This value is determined for an ideal ballistic transport in a nanowire
Poznan University of Technology, Poland
Title: Electrical Resistance of Metallic and Semiconductor Nanowires
Biography:
Waldemar Nawrocki is Professor of electronics at Poznan University of Technology, Poland, where he earned a Ph.D. in technical sciences in 1981. Dr. Nawrocki also holds a D.Sc. in physics from Jena University, Germany, in 1990. His research fields are: Applications of quantum effects in metrology, Quantization of conductance in mesoscopic systems, Noise thermometry, Cryoelectronics, Measurement systems. Dr. Nawrocki has published 14 books, e.g. Measurement Systems and Sensors (Artech House, 1st edition – 2005, and 2nd edition - 2016) and Introduction to Quantum Metrology (Springer, 2015). Over the period 2006 to 2016 he organized and chaired five international conferences on quantum metrology.
In the paper electrical resistance (conductance) and thermal conductance of metallic and semiconductor nanowires are discussed. We have analyzed and measured nanowires created of gold, copper, tin, silicon and germanium because of using them for manufacturing of integrated electronic devices. Electrical conductance GE and thermal conductance GT of a nanostructure describe the effect of electron transport in nanowires. Electrical conductance quantization in nanowires has been observed in units of G0 = 2e2/h = (12.9 kï—)-1 up to five quanta of conductance according to the theory proposed by Landauer [1]. In the paper we present our measurements of electrical conductance quantization in Au nanowires at room temperature [2]. The quantization of thermal conductance is considered in a similar way like the electrical conductance. In one-dimension systems are formed conductive channels. Each channel contributes to a total thermal conductance with the quantum of thermal conductance GT0. Quantized thermal conductance and its quantum (unit) GT0 was confirmed by Schwab [3]. The quantum of thermal conductance GT0 [W/K] = (p2kB2/3h)T = 9.5×10-13T depends on the tempera-ture. At T = 300 K value of GT0 = 2.8×10-10 [W/K]. This value is determined for an ideal ballistic transport in a nanowire