American scientist D. Fisher paid attention to the "point of infinite compression, a special “singular” point. Mathematically, it corresponds to a function having an explosive derivative. Professor of the University of Munich R. Kippenhan in his work noted that "from the surface of the star quantum electromagnetic radiation rushes into interstellar space." reaching our atmosphere creates converging spherical waves leading to an infinite point of compression, having an explosive character. Our studies have shown that these electromagnetic waves are to a large extent the ultraviolet radiation of the near range of 400-300nm. The near ultraviolet range is often called “black light,” since the human eyes do not recognize it. Black light when colliding with the atmosphere continuum forms converging spherical supercompression waves. These waves when they reach the atmosphere of the earth create an explosive field.

Our dynamic emitter of the original design generates spherical converging shock waves in a supersonic jet, leading to the point of infinite compression "special point" having an explosive derivative. The jet, interacting with the atmospheric background ultraviolet radiation, entering into the resonance mode generates a powerful explosion of black light (Figure 1) [3], the energy of which provides the synthesis of porous nanomaterial. The principle of operation of the emitter in practice has shown that the energy of a powerful explosion of black light in the laboratory and in production is a safe, cost-effective source of energy.

The efficiency of the high-power, high-voltage (HV) insulation system is currently approaching a saturation level due to the limited availability of the high-quality resistive stress-grading material that can withstand ever-increasing applied voltage at very low insulation-wall thickness. A unique non-rectifying, non-linear current-voltage characteristic is observed in ZnO nanoparticle-anchored carbon nanofiber (ZnO-CNF) hybrid thin film devices, which has novel applications in non-linear stress-grading materials for high-voltage devices and overvoltage protectors in multifunctional electronic circuits. A simple chemical precipitation method is used to fabricate the hybrid films, followed by vacuum-annealing at elevated temperatures. Interestingly, the organic surfactant (Triton X-114), used as binder during the film deposition, manifests unintentional carbon-doping into ZnO lattice, which leads to a conductivity inversion of ZnO from n-type in lower-temperature (300 ºC) annealed hybrid into p-type in the higher-temperature (600 ºC) annealed film. The novelty of this work is that, the CNF-ZnO interface acts as a metal-semiconductor (M-S) junction, where high conducting CNF acts as the metal and ZnO NPs as the semiconducting (n- or p-type) counterpart (denoted as MCNF-Sn/p-ZnO junction). The band-energy calculations have revealed that the barrier height at the MCNF-Sn/p-ZnO junction is quite low to manifest non-rectifying characteristics (i.e. the I-V curves are near-symmetric in both forward and reverse directions). Additionally, a large number of C-atoms (from the surfactant) are not only doped into the ZnO lattice, but also reside at the ZnO-CNF interface as trap states. Electrical characterizations reveal that the CNF-ZnO interfaces act as a metal-semiconductor junction with low barrier height, leading to non-rectifying junction properties. Also the surfactant-induced C-atoms create trap-states at the interface which ‘emit’ the trapped charges via interfacial field-assisted tunneling, thus imposing non-linearity (in both forward and reverse directions) on the I-V curves.