Amit Goyal is the director of the multidisciplinary and interdisciplinary RENEW (Research & Education in Energy, Environment & Water) Institute at SUNY-Buffalo in Buffalo, New York. He is also Empire Innovation Professor at SUNY-Buffalo. Previously he was a UT-Battelle corporate fellow, a Battelle Distinguished Inventor and an ORNL Distinguished Scientist at Oak Ridge National Laboratories in Tennessee. He was also the Chair of the UT-Battelle-ORNL Corporate Fellow Council. Goyal is one of the leading scientists worldwide in the field of advanced electronic and energy materials including high temperature superconductors. He has over 85 issued patents. He also has over 350 publications. In 2009, an analysis of citations and papers published worldwide in the last decade in the field of high-temperature superconductivity, in 1999–2009, conducted by Thomson Reuters Essential Science Indicators (ESI), ranked him as the most cited author worldwide during those years. He is a member of the National Academy of Engineering and the National Academy of Inventors.
For many energy and electronic applications, single-crystal-like materials offer the best performance. However, in almost all cases, fabrication of single-crystal form of the relevant material is too expensive. In addition, for many applications, very long or wide materials are required, a regime not accessible by conventional single-crystal growth. This necessitates the use of artificially fabricated, large-area, single-crystal-like substrates suitable for heteroepitaxial growth of the relevant advanced material for the electronic or energy application in question. In this talk, details of the fabrication of such substrates will be provided. Heteroepitaxial growth of nanolaminate multilayers and devices on such substrates using a variety of deposition techniques such as pulsed laser ablation, sputtering, e-beam evaporation, MBE, MOCVD, and chemical solution deposition will be reported upon. Application areas that have been demonstrated via the use of such artificial substrates include – oxide high-temperature superconductors, semiconductor materials (Si, Ge, GaAs, CdTe, Cu2O), ferroelectrics (BaTiO3), multiferroics (BiFeO3), etc. In addition, strain-driven self-assembly of second phase nanomaterials at nanoscale spacings has been demonstrated within device layers. Control of heteroepitaxy in lattice-mismatched systems and the effects of strain on self-assembly will be discussed. Such heteroepitaxial device layers on large-area, single-crystal-like artificial substrates are quite promising for a range of electrical and electronic applications.
Israel Institute of Technology, Israel
University of Barcelona, Spain
For the first time, quantum physics was interpreted as a system of information communication, combining calculations and measurements in the framework of differential geometry and the inverse topology of an oscillating 137 polyhedron. As a result, only the functional relationships of the two transcendental numbers PI and E with three unique integers A, R, B were necessary and sufficient for the analytical determination of basic quantum units with practically unlimited accuracy 1/10 ^ 64:
A = 137 (integer of Sommerfeld),
R = 105456978 (integer of Dirac),
B = 602214183 (Avogadro's integer).
The key to quantum computations is the squared sum of arithmetical, geometrical, harmonic and rms: SMS [PI…E] =
[Sqrt((PI^2+E^2)/2+(PI+E)/2+Sqrt(PI*E)+2*PI*E/(PI+E)]^2 =[136.9938985020083593] that very close to 137 = A.
Four matrix equations describe the inverse geometry of simultaneously pulsating and rotating polyhedron:
Relative inverse eccentricity of Sommerfeld
[A] = (100*([R]-1)/2-E)/(1+Sqrt(2*PI*E/100)).
Relative inverse radius of Dirac
[R] = 1+2/100*(E+[A]*(1+Sqrt(2*PI*E/100))).
Relative inverse perimeter of Planck [P] = 2*PI*[R].
Relative density of perimeters of Newton [G] = [P]*(1+[A]).
Six matrix equations describe dynamics of three-dimensional wave fronts motion:
Relative velocity [V] = [R]^64*10^7.
Relative energy [W] = 1+[V]^2.
Relative amplitude displacement [MM] = 12-[A]/10.
Relative phase displacement [KB] = Cos [MM]-Sin [MM].
Relative information entropy [NA] = {Sqrt(8*PI*E/(8*PI*E+A^2))/(1+2*[A]/1000) +5/10^8}/10.
Relative inverse information entropy [DA] =1/[NA]/100.
Ten scaling units coordinate binary [0...1], quantum binary [0.00000000>...1.11111111>], decimal [0...10], quantum decimal [0,00000000>...9.99999999>], alpha [0...137] and quantum natural [0…SMS] computations:
Integral rotational speed of Maxwell
C = (R/10^8+4*PI*C/10^18)^64*10^7 = [299792457.86759134].
Integral of Sommerfeld
A1 = 1/A = Sum{729927/10^(8*N) = [0.0072992700729927].
Inverse integral of Sommerfeld
AS = 1/100/Sum{[A+(A-100)*N]/10^(3*N+2)}= [0.00729].
Fine eccentricity of Feynman AF = 1000/Integer{1000*Sqrt(A^2+PI^2) = [0.0072973525205056].
Integral of Avogadro
BS = Sum{B/10^(3*N+11)} = [0.00602817].
Entropy limit of Avogadro
NB = B/(1+4*PI/10^8)/10^11 = [0.0060221410732354].
Background temperature limit of Kelvin
K = E+AS+BS = [2.7315999984590452].
Displacement factor of Wien
X = Root{X*E^X/(E^X-1) = 5} = [4.9651142317442763].
The functional relations of PI and E generate thirteen basic "consonant" of quantum alphabet:
Upper parabolic limit of eccentricity A4 =.(PI*E/100)^2+(1/A-(PI*E/100)^2) = 0.0073189621138002.
Upper hyperbolic limit of eccentricity AH = 1/(16*PI*E) = 0.0073187289405399.
Upper elliptic limit of eccentricity A(NB) =. 0.0073131309589000.
Upper logarithmic limit of eccentricity AL =. 1/(Ln(E)+59*Ln(10)) = 0.0073071361524362.
Hyperbolic symmetry point of eccentricity A1 =. 1/A = 0.0072992700729927.
Biquadratic symmetry point of eccentricity AF = 0.0072973525205056.
Parabolic symmetry point of eccentricity A0 =. (PI*E/100)^2 = 0.0072927060593902.
Qubit symmetry point of eccentricity AS = 1/100/(1.111111111111>)^3 = 0.0072900000000000.
Upper limit of nuclear radius RC = R/10^8+4*PI*C/10^18 = 1.0545697837673031.
Upper median of nuclear radius RE = R/10^8+1/E/10^8 = 1.0545697836787944.
Lower median of nuclear radius RA = R/10^8+1/(E+AS)/10^8 = 1.0545697836787944.
Lower limit of nuclear radius RK
R/10^8+1/(E+AS+BS)/10^8 = 1.0545697836608581.
Lower limit of eccentricity AX = 5/X-1 = 0.0070261763632109.
Medians of “consonants” generate "vowels" of the quantum alphabet:
Background (‘relic”) temperature TBG = [2.72525432756].
Vibrational tempo T = [2.99792456086] *10^+8.
Translational velocity V = [2.99792456976] *10^+8.
Relative molar mass MR = [0.011999277750].
Boltzmann constant KB = [1.38064845023] *10^-23.
Avogadro constant NA = [6.02214105620] *10^+23.
Atomic mass constant DA = [1.66053898549] *10^-29.
Planck constant PP = [6.62607001111] *10^-34.
Elementary charge Q = [1.60217661502] *10^-19.
Newtonian gravitational constant G = [6.67405289685] *10^-11
Conclusion: The quantum alphabet combines binary (bit), natural (nat), decimal (dit) and alpha (alt) computational systems in the framework of unified non-commutative mathematics. Natural computing creates an absolute metric system and mutually coordinates classical thermodynamics, electrodynamics, chromodynamics and gravidynamics with special and general theory of relativity. All calculated fundamental constants of quantum physics are mutually consistent, more accurate than recommended by CODATA, and can be used as an exact base for the new SI-2019.
Sergi Dosta is working as professor at the University of Barcelona since 2007. His expertise in the materials science and engineering starts in 2003 focused in the Thermal Spray field with nanostructured materials. He is the technical manager of the Thermal Spray Centre (CPT) since 2010. Dr. Dosta has published more than 80 research papers, has directed 3 thesis and has 20 patents and industrial trade secrets. He is main responsible of 2 european projects from the H2020 and has lead over 50 industrial and research projects. he is the expert in Cold Gas Spray Technology and has been invited to give talks in different conferences and workshops all over the world.
Polytechnic University of Turin, Italy