Niloufar RaeisHosseini (Nellie), is an honorary research fellow in the Department of Electrical and Electronic Engineering (EEE), Imperial College London, where she conducts her research in a multi-disciplinary team of “Circuit and Systems”. She is an awardee of “Newton International Fellowship” offered by the “Royal Society”. She is an international expert in nanoelectronic materials and nanoscale devices. She has fulfilled her first postdoctoral fellowship by awarding a professional research grant from the National Research Foundation (NRF) of South Korean government by joining in “Nanoscale Photonics & Integrated Manufacturing” group at “Pohang University of Science and Technology” (POSTECH), soon after receiving her Ph.D in “Nanoelectronic Materials and Devices” from the same university.
Abstract
Phase change metamaterial (PCM) is a potential candidate to be assimilated in planar structures to make a new generation of tunable optical devices. We developed a tunable perfect absorber based on PCM, which also works as a non-volatile optical memory. By exploiting the advantage of switching the PCM between amorphous and crystalline states, we designed and fabricated a flexible programmable perfect absorber. The suggested device reflects the basic requirements of a re-writable and non-volatile memory by absorbing the light into a thin film of a PCM.